Integrated Microelectronic Devices
Lecture Notes
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SES # |
TOPICS |
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L1 |
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L2 |
Intrinsic, extrinsic semiconductors; conduction and valence band density of states (DOS) (PDF) |
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L3 |
Carrier statistics in semiconductors; Fermi level (PDF) |
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L4 |
Generation and recombination mechanisms; equilibrium rates (PDF) |
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L5 |
Generation and recombination rates outside equilibrium (PDF) |
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L6 |
Carrier dynamics; thermal motion (PDF) |
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L7 |
Drift; diffusion; transit time (PDF) |
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L8 |
Non-uniform doping distribution (PDF) |
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L9 |
Quasi-Fermi levels; continuity equations (PDF) |
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L10 |
Shockley equations; majority-carrier type situations (PDF) |
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L11 |
Minority-carrier type situations: statics (PDF) |
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L12 |
Minority-carrier dynamics; space-charge and high resistivity (SCR) transport; carrier multiplication (PDF) |
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L13 |
PN junction: electrostatics in and out of equilibrium (PDF) |
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L14 |
PN junction: depletion capacitance; current-voltage (I-V) characteristics (PDF) |
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L15 |
PN junction: carrier storage; diffusion capacitance; PN diode: parasitics (PDF) |
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L16 |
PN junction dynamics; PN diode: non-ideal and second-order effects (PDF) |
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L17 |
Metal-semiconductor junction electrostatics in and out of equilibrium; capacitance-voltage (C-V) characteristics (PDF) |
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L18 |
Metal semiconductor junction I-V characteristics (PDF) |
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L19 |
Schottky diode; equivalent-circuit model; ohmic contacts (PDF) |
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L20 |
Ideal semiconductor surface (PDF) |
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L21 |
Metal-oxide-semiconductor (MOS) in equilibrium (PDF) |
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L22 |
MOS outside equilibrium; Poisson-Boltzmann formulation (PDF) |
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L23 |
Simplifications to Poisson-Boltzmann formulation (PDF) |
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L24 |
Dynamics of MOS structure: C-V characteristics; three-terminal MOS (PDF) |
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L25 |
Inversion layer transport (PDF) |
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L26 |
Long-channel metal-oxide-semiconductor field-effect (MOSFET): I-V characteristics (PDF - 1.1 MB) |
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L27 |
I-V characteristics (cont.): body effect, back bias (PDF) |
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L28 |
I-V characteristics (cont.): channel-length modulation, sub threshold regime (PDF) |
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L29 |
C-V characteristics; small-signal equivalent circuit models (PDF) |
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L30 |
Short-channel MOSFET: short-channel effects (PDF) |
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L31 |
MOSFET short-channel effects (cont.) (PDF) |
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L32 |
MOSFET scaling (PDF) |
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L33 |
Evolution of MOSFET design (PDF) |
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L34 |
Bipolar junction transistor (BJT) intro; basic operation (PDF) |
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L35 |
BJT I-V characteristics in forward-active (PDF) |
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L36 |
Other regimes of operation of BJT (PDF) |
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L37 |
BJT C-V characteristics; small-signal equivalent circuit models (PDF) |
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L38 |
BJT high-frequency characteristics (PDF) |
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L39 |
BJT non-ideal effects; evolution of BJT design; bipolar issues in complementary metal-oxide-semiconductor (CMOS) (PDF) |
Assignments
Homework 1 (PDF)
Homework 2 (PDF)
Homework 3 (PDF)
Homework 4 (PDF)
Homework 5 (PDF)
Homework 6 (PDF)
Homework 7 (PDF)
Homework 8 (PDF)
Homework 9 (PDF)
Exams
Previous Exams
Quiz 1 (PDF)
Quiz 2 (PDF)
Final (PDF)
Projects
This section contains the project assignments and a manual for MATLAB®, which students use throughout the projects.
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PROJECTS |
TOPICS |
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Device characterization project |
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1 |
Metal-oxide-semiconductor field-effect (MOSFET) source-body PN diode characterization (PDF) |
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2 |
0.18μm N-MOSFET characterization (PDF) |
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3 |
NPN bipolar junction transistor (BJT) characterization (PDF) |
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Design problem |
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Gate material options for deep-submicron complementary metal-oxide-semiconductor (CMOS) technology for high-performance microprocessor applications (PDF) |
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MATLAB® guide (PDF) |
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